APTML20UM18R010T1AG APTML20UM18R010T1AG C rev 1 october, 2012 www.microsemi.com 1 C 4 pins 1/2 ; 5/6 must be shorted together absolute maximum ratings * output current must be limited to 44a @ t c =25c and 31a @ t c =80c to not exceed the shunt specification. ? in saturation mode these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. see application note apt0502 on www.microsemi.com symbol parameter max ratings unit v dss drain - source breakdown voltage 200 v t c = 25c 109* i d continuous drain current t c = 80c 81* i dm pulsed drain current 400 a v gs gate - source voltage 30 v r dson drain - source on resistance 19 m ? p d maximum power dissipation ? t c = 25c 480 w i ar avalanche current (repetitive and non repetitive) 100 a e ar repetitive avalanche energy 50 e as single pulse avalanche energy 3000 mj application ? electronic load dedicated to power supplies and battery discharge testing features ? linear mosfet ? very low stray inductance ? internal thermistor for temperature monitoring ? high level of integration ? aln substrate for improved thermal performance benefits ? direct mounting to heatsink (isolated package) ? easy series and parallels combinations for power and voltage improvements ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? low profile ? rohs compliant linear mosfet power module v dss = 200v r dson = 18m ? typ @ tj = 25c i d = 109a* @ tc = 25c downloaded from: http:///
APTML20UM18R010T1AG APTML20UM18R010T1AG C rev 1 october, 2012 www.microsemi.com 2 C 4 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit v ds = 200v ; v gs = 0v t j = 25c 25 i dss zero gate voltage drain current v ds = 160v ; v gs = 0v t j = 125c 250 a r ds(on) drain C source on resistance v gs = 10v, i d = 50a 18 19 m ? v gs(th) gate threshold voltage v gs = v ds , i d = 2.5ma 2 4 v i gss gate C source leakage current v gs = 30 v 100 na dynamic characteristics symbol characteristic test conditions min typ max unit c iss input capacitance 9880 c oss output capacitance 2320 c rss reverse transfer capacitance v gs = 0v v ds = 25v f = 1mhz 700 pf shunt electrical characteristics symbol characteristic min typ max unit r sh resistance value 10 m ? t sh tolerance 2 % t c =25c 20 p sh load capacity t c =80c 10 w t c =25c 44 i sh current capacity t c =80c 31 a temperature sensor ptc symbol characteristic min typ max unit r 25 resistance @ 25c 1980 2020 ? r 100 /r 25 resistance ratio tamb=100c & 25c 1.676 1.696 1.716 r -55 /r 25 resistance ratio tamb=-55c & 25c 0.48 0.49 0.50 b temperature coefficient 7900 ppm/k thermal and package characteristics symbol characteristic min typ max unit r thjc junction to case thermal resistance mosfet 0.26 c/w v isol rms isolation voltage, any terminal to case t =1 min, 50/60hz 4000 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m4 2 3 n.m wt package weight 80 g downloaded from: http:///
APTML20UM18R010T1AG APTML20UM18R010T1AG C rev 1 october, 2012 www.microsemi.com 3 C 4 sp1 package outline (dimensions in mm) see application note 1904 - mounting instructions for sp1 power modules on www.microsemi.com typical performance curve (linear mode) drain current vs drain source voltage 1 10 100 0 50 100 150 200 drain source voltage (v) drain current (a) t j =125c power vs drain source voltage 200 250 300 350 400 0 50 100 150 200 drain source voltage (v) dissipated power (w) t j =125c downloaded from: http:///
APTML20UM18R010T1AG APTML20UM18R010T1AG C rev 1 october, 2012 www.microsemi.com 4 C 4 disclaimer the information contained in the document (unless it is publicly available on the web without access restrictions) is proprietary and confidential information of microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of microsemi. if the recipient of this document has entered into a disclosure agreement with microsemi, then the ter ms of such agreement will also apply. this document and the information contained herein may not be modified, by any person other than authorized personnel of microsemi. no license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication , inducement, estoppels or otherwise. any license under such intellectual property rights must be approved by microsemi in writing signed by an officer of microsemi. microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. this product has been subject to limited testing and should not be used in conjunction with li fe- support or other mission-critical equipment or applications. microsemi assumes no liability whatsoever, and microsemi disclaims any express or implied warranty, relating to sale and/or use of microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or custo mers final application. user or customer shall not rely on any data and performance specifications or parameters provided by microsemi. it is the customers and users responsibility to independently determine suitability of any microsemi product and to test and verify the same. the information contained herein is provided as is, where is and with all faults, and the entire risk associated with such information is entirely with the user. microsemi specifically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. the product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp life support application seller's products are not designed, intended, or authorized for use as components in systems intended for space, aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other application in which the failure of the seller's product could create a situation where personal injury, death or property damage or loss may occur (collectively "life support applications"). buyer agrees not to use products in any life support applications and to the extent it does it shall conduct extensive testing of the product in such applications and further agrees to indemnify and hold seller, and its officers, employees, subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, dam ages and expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage or otherwise associated with the use of the goods in life support applications, even if such claim includes allegations that seller was negligent regarding the design or manufacture of the goods. buyer must notify seller in writing before using sellers products in life support applications. seller will study with buyer alternative solutions to meet buyer application specification based on sellers sales conditions applicable for the new proposed specific part. downloaded from: http:///
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